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| 1SS387 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION) | |||
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Transys
Electronics
LIMITED
SOD-523 Plastic-Encapsulate Diodes
1SS387 High Speed SWITCHING Diodes
FEATURES
Small package
Maximum Ratings and Electrical Characteristics, Single Diode @TA=25â
Parameter
Peak reverse voltage
DC reverse voltage
Peak forward current
Mean rectifying current
Surge current (10ms)
Symbol
VRM
VR
IFM
IO
Isurge
Limits
85
80
200
100
1000
Junction temperature
Tj
125
Unit
V
V
mA
mA
mA
â
Storage temperature
Tstg
-55~+125
â
Electrical Ratings @TA=25â
Parameter
Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time
Symbol Min. Typ. Max. Unit
Conditions
VF1
0.62
V
IF=1mA
VF2
0.75
V
IF=10mA
VF3
1.2 V
IF=100mA
IR1
0.1 µA
VR=30V
IR2
0.5 µA
VR=80V
CT
3.0 pF
VR=0,f=1MHZ
trr
4
ns VR=6V,IF=10mA,RL=100â¦
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