1SS370 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – DIODE (HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS)

Transys
Electronics
LIMITED
SOT-323 Plastic-Encapsulated Diode
1SS370 SWITCHING DIODE
FEATURES
z Small surface mounting type
z High Speed
z High reliability with high surge current handing capability
SOT-323
1. ANODE
2. N.C.
3. CATHODE
MAKING: F5
Unit:mm
Maximum Ratings and Electrical Characteristics, Single Diode @T_A=25℃
Parameter
Symbol
Limits
Unit
Peak reverse voltage
V_RM
250
V
DC reverse voltage
V_R
200
V
Peak forward current
I_FM
300
mA
Mean rectifying current
I_O
100
mA
Surge current (10ms)
I_FSM
2
A
Junction temperature
T_j
125
℃
Storage temperature
T_stg
-55~+125
℃
Electrical Ratings @T_A=25℃
Parameter
Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time
Symbol
V_F
I_R
C_T
t_rr
Min.
Typ.
Max. Unit
1
V
1.2
0.1
µA
1
3.0 pF
60 ns
Conditions
I_F=10mA
I_F=100mA
V_R=50V
V_R=200V
V_R=0, f=1MHZ
V_R=6V,I_F=10mA,Irr=0.1*I_R