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| 1SS357 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – DIODE (LOW VOLTAGE HIGH SPEED SWITCHING) | |||
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1SS357 Schottky Diodes
FEATURES
z Small Package
z Low VF, low IR
MAKING: S31
Maximum Ratings and Electrical Characteristics, Single Diode @TA=25â
Parameter
Peak reverse voltage
DC reverse voltage
Mean rectifying current
Peak forward surge current
Symbol
VRM
VR
IO
IFSM
Limits
45
40
0.1
1
Junction temperature
Tj
125
Storage temperature
Tstg
-55~+125
Unit
V
V
A
A
â
â
Electrical Ratings @TA=25â
Parameter
Symbol Min. Typ. Max. Unit
Forward voltage
VF
Reverse current
IR
Capacitance between terminals
CT
0.28
V
0.36
0.6
5 µA
25 pF
Conditions
IF=1mA
IF=10mA
IF=100mA
VR=40V
VR=0,f=1MHz
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