1SS187 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)

Transys
Electronics
LIMITED
SOT-23 Plastic-Encapsulated Diodes
1SS187 SWITCHING DIODE
FEATURES
Power dissipation
P_D : 150 mW(Tamb=25℃)
Forward Current
I_F:
100 m A
Reverse Voltage
V_R:
80 V
Operating and storage junction temperature range
T_J,T_stg: -55℃ to +150℃
SOT-23
2. 4
1. 3
Unit : mm
Mar ki ng D3
ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specified)
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Symbol
V(BR)
IR
Test conditions
IR= 100µA
VR=80V
MIN
MAX
80
0.5
Forward voltage
VF
IF=100mA
1.2
UNIT
V
µA
V
Diode capacitance
CD
VR=0V f=1MHz
4
pF
Reverse recovery time
t rr
4
nS