1N4448 Datasheet, PDF (1/2 Pages) Rectron Semiconductor – SIGNAL DIODE

Transys
Electronics
LIMITED
HIGH SPEED SILICON SWITCHING DIODES AXIAL LEAD
1N4148, 1N4448
DO-35, 500mW
DESCRIPTION
General purpose ,Industrial, Military and space applications. Hermetically sealed glass with a stud
on either side of the glass passivated chip provides excellent stability. Extremely low leakage &
very high reliability
ABSOLUTE MAXIMUM RATINGS( TA=25 deg C unless otherwise specified)
DESCRIPTION
SYMBOL
Peak Repetitive Reverse Voltage
VRRM
Reverse Voltage (Continuous)
VR
Average Forward Current
IF(AV)
Forward Current (DC)
IF
Repetitive Peak Forward Current
IFRM
Non Repetitive Peak Surge Current tp=1usec IFSM
tp=1sec
IFSM
Power Dissipation
PTA
Derating Factor
Operating & Storage Junction Temperature
Tj, Tstg
Range
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
VALUE
100
75
150
200
450
2000
500
500
2.85
-65 to +200
UNIT
V
V
mA
mA
mA
mA
mA
mW
mW/deg C
deg C
MIN TYP MAX UNIT
Forward Voltage
Reverse Current
Reverse Breakdown Voltage
DYNAMIC CHARACTERISTICS
Diode Capacitance
Forward Recovery Voltage
Reverse Recovery Time
VF
IF=5mA
1N4448 0.62 - 0.72
V
IF=10mA
1N4148
-
- 1.0
V
IF=100mA 1N4448
-
- 1.0
V
IR
VR=20V
-
- 25
nA
VR=75V
-
- 5.0
uA
VR=20V, Tj=150 deg C -
- 50
uA
VR=75V, Tj=150 deg C -
- 100
uA
VBR IR=100uA
100 -
-
V
IR=5uA
75
-
-
V
Cd
VR=0V, f=1MHz
-
- 4.0
pF
Vfr
IF=50mA, tr=20ns
-
- 2.5
V
trr
IF=10mA, to IR=60mA
-
- 4.0
ns
RL=100ohms
Measured @ IR=1mA