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MS32 Datasheet, PDF (1/6 Pages) TE Connectivity Ltd – AMR Switching-Sensor | |||
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Figure 1: Characteristic curves for MS32 at
different ambient temperatures (-20°C, +30°C,
+80°C)
FEATURES
ï· Sensor based on solid state
magnetoresistance effect
ï· Unipolar signal output
ï· Linear field response
ï· High sensitivity, low hysteresis
ï· Temperature compensated
switching point
ï· Low power consumption due to high
bridge resistance
ï· Supply voltage up to 30 V
ï· Small TDFN package
MS32
Switching Sensor
SPECIFICATIONS
ï· AMR Switching-Sensor
ï· TDFN Outline 2.5x2.5x0.8 mm3
ï· Temperature Compensated Switching Point
ï· Low Power Consumption
The MS32 is a magnetic field sensor which is built in the form of a
Wheatstone bridge. Each of its four resistors is made from
Permalloy, a material that shows the anisotropic magneto
resistance effect. An unidirectional magnetic field in the surface
parallel to the chip (x-y plane) along the y-axis will deliver a field
dependent output signal. A magnetic switching point, which is
almost independent on temperature is typically set to
Hs=1.85 kA/m. In addition, the characteristic curve is linear over a
wide magnetic field range. Thus, the new MS32 simplifies the
adaption of the sensor to different mechanical and magnetical
environments. The sensor die is packaged in a TDFN package.
8
-20°C
+30°C
6
+80°C
4
Hs-range
2
H [kA/m ]
0
0
1
2
s3ensitivity 4
5
6
7
-2
-4
-6
sw itching field Hs
APPLICATIONS
ï· Contactless position detection (presence,
open/close)
ï· Industrial
ï· Consumer
ï· Automotive
ï· Small stroke pneumatic cylinders
ï· Cover positions of Notebooks and Mobiles
ï· Doors, windows etc.
SENSOR SOLUTIONS ///MS32 Rev 6
1/2016
Page 1
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