ERB43-02 Datasheet, PDF (2/2 Pages) Galaxy Semi-Conductor Holdings Limited – FAST RECOVERY RECTIFIER

FAST RECOVERY RECT IFIER
ERB43-02 THRU ERB43-04
200V-400V 0.5A
RATINGS AND CHARACTERISTIC CURVES ERB43-02 THRU ERB43-04
FIG.1 -- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50
10
N.1.
N.1.
trr
+0.5A
(+)
50VDC
(APPROX)
(-)
D.U.T.
1
N.1.
OSCILLOSCOPE
(NOTE 1)
(-)
PULSE
GENERATOR
(NOTE2)
(+)
0
-0.25A
NOTES:1.RISETIME=7ns MAX. INPUTIMPEDANCE=1M .22pF
2.RISETIME=10ns MAX. SOURCEIMPEDANCE=5O
-1.0A
1cm
SETTIMEBASEFOR50/100 ns /cm
FIG.2 --TYPICAL FORWARD CHARACTERISTIC
FIG.3 -- FORWARD DERATING CURVE
100
10
TJ=25
Pulse Width=300µS
4
2
1.0
0.4
0.2
0.1
0.06
0.04
0.02
0.01
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
0.7
0.6
0.5
0.4
0.3
S ingle P hase
Half W ave 60Hz
0.2
R esistive or
Inductive Load
0.1
00
20 40
60
80 100
120 140 150
AMBIENT TEMPERATURE,
FIG.4--TYPICAL JUNCTION CAPACITANCE
10
16
14
12
10
4
TJ=25
f=1MHz
2
1
.1 .2 .4
1.0 2 4
10 20 40 100
REVERSE VOLTAGE,VOLTS
FIG.5--PEAK FORWARD SURGE CURRENT
20
15
10
5
0
1
TJ=125
8.3ms Single Half
Sine-Wave
2
4
8 10
20
40 60 80 100
NUMBER OF CYCLES AT60 Hz
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