U1B Datasheet, PDF (1/2 Pages) Vishay Siliconix – Surface Mount Ultrafast Plastic Rectifier

Surface Mount Ultrafast Plastic Rectifier
U1B THRU U1D
100V-200V 1.0A
FEATURES
• Oxide planar chip junction
• Ultrafast recovery time
• Low forward voltage, low power losses
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Mechanical Data
• Oxide planar chip junction
• Ultrafast recovery time
• Low forward voltage, low power losses
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC ^{and WEEE 2002/96/EC}
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
U1B
U1C
U1D
Device marking code
U1B
U1C
U1D
Maximum repetitive peak reverse voltage
V_RRM
100
150
200
Maximum average forward rectified current (Fig. 1)
I_F(AV)
1.0
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
I_FSM
30
Operating junction and storage temperature range
T_J, T_STG
- 55 to + 150
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Instantaneous forward voltage ⁽¹⁾
I_F = 0.6 A
I_F = 1.0 A
I_F = 0.6 A
I_F = 1.0 A
T_A = 25 °C
0.82
0.87
V_F
T_A = 100 °C
0.71
0.76
Reverse current ⁽²⁾
rated V_R
T_A = 25 °C
T_A = 100 °C
I_R
-
55
Reverse recovery time
I_F = 0.5 A, I_R = 1.0 A,
I_rr = 0.25 A
T_A = 25 °C
t_rr
-
I_F = 0.6 A, dI/dt = 50 A/µs,
V_R = 30 V, I_rr = 0.1 I_RM
T_A = 25 °C
T_A = 100 °C
t_rr
24
29
Storage charge
I_F = 0.6 A, dI/dt = 50 A/µs,
V_R = 30 V, I_rr = 0.1 I_RM
T_A = 25 °C
T_A = 100 °C
Q_rr
7
13
Typical junction capacitance
4.0 V, 1 MHz
C_J
6.8
MAX.
0.87
0.92
0.78
0.84
5.0
100
15
-
-
-
-
-
UNIT
V
A
A
°C
UNIT
V
µA
ns
ns
nC
pF
E-mail: [e-mail]
1 of 2
Web Site: www.taychipst.com