TVR5B Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TOSHIBA Fast Recovery Diode Silicon Diffused Type

FAST RECOVERY RECTIFIER
TVR5B THRU TVR5J
100V-600V 0.5A
FEATURES
· Low cost
· Diffus ed junction
· Low leakage
· Low forward voltage drop
· High current capability
· Eas ily cleaned with Freon,Alcohol,Is opropanol
and s im ilar s olvents
· The plas tic m aterial carries U/L recognition 94V-0
Mechanical Data
Cas e:JEDEC R-1,m olded plas tic
Term inals : Axial lead ,s olderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.014 ounces ,0.39 gram s
Mounting pos ition: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Maximum Ratings (Ta = 25°C)
Characteristics
Repetitive peak
reverse voltage
TVR5B
TVR5G
TVR5J
Average forward current
Peak one cycle surge forward current
(non repetitive)
Junction temperature
Storage temperature range
Symbol
V_RRM
I_{F (AV)}
I_FSM
T_j
T_stg
Rating
100
400
600
0.5
20
-40 to 125
-40 to 125
Unit
V
A
A
°C
°C
Electrical Characteristics (Ta = 25°C)
Characteristics
Peak forward voltage
Repetitive peak reverse current
Reverse recovery time
Symbol
V_FM
I_RRM
t_{rr (1)}
t_{rr (2)}
Test Condition
I_FM = 0.5 A
V_RRM = Rated
I_F = 20 mA, I_R = 1 mA
I_F = 100 mA, I_R = 100 mA
Min Typ. Max Unit
¾
¾
1.2
V
¾
¾
10
mA
¾
¾
1.5
ms
¾
¾
500
ms
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