TVR4J Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TOSHIBA Fast Recovery Diode Silicon Diffused Type High Speed Rectifier Applications (fast recovery)

FAST RECOVERY RECTIFIER
TVR4J THRU TVR4N
600V-1000V 1.5A
FEATURES
· Low cost
· Diffus ed junction
· Low leakage
· Low forward voltage drop
· High current capability
· Eas ily cleaned with Freon,Alcohol,Is opropanol
and s im ilar s olvents
· The plas tic m aterial carries U/L recognition 94V-0
Mechanical Data
Cas e:JEDEC DO-15,m olded plas tic
Term inals : Axial lead ,s olderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.014 ounces ,0.39 gram s
Mounting pos ition: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 am bient tem perature unles s otherwis e s pecified.
Single phas e,half wave,60 Hz,res is tive or inductive load. For capacitive load,derate by 20%.
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average f orw ard rectif ied current
9.5mm lead length,
@ T_A =75
Peak f orw ard surge current
8.3ms single half -sine-w ave
superimposed on rated load
Maximum instantaneous f orw ard voltage
@ 1.5 A
V_RRM
V _{R MS}
V_DC
I_{F (AV)}
I_{F SM}
V_F
Maximum reverse current
@T_A=25
at rated DC blocking voltage @T_A=100
Maximum reverse recovery time (Note1)
Typical junction capacitance (Note2)
Typical thermal resistance
(Note3)
Operating junction temperature range
Storage temperature range
I_R
t_rr
C_J
R_θJA
T_J
T_STG
N OTE:1. Meas ured with I_F=0.5A, I_R=1A, I_rr=0.25A.
2. Meas ured at 1.0MH z and applied rev ers e v oltage of 4.0V D C .
3. Therm al resistanc e f rom junc tion to am bient.
TV R4J
600
420
600
TV R4N
1000
700
1000
1.5
50.0
1.3
5.0
1 0 0 .0
1000
20
40
-55----+150
-55----+150
UNITS
V
V
V
A
A
V
A
ns
pF
/W
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