TVR2B Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TV Applications (fast recovery)

FAST RECOVERY RECTIFIER
TVR2B THRU TVR2J
100V-600V 0.5A
FEATURES
· Low cost
· _{Diffused junction}
· Low leakage
· Low forward voltage drop
· High current capability
· Easily cleaned with Freon,Alcohol,Isopropanol
and similar solvents
· _{The plastic material carries U/L recognition 94V-0}
Mechanical Data
Case:JEDEC DO-41,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.012ounces,0.34 grams
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phas e,half wave,60 Hz,res is tive or inductive load. For capacitive load,derate by 20%.
TVR2B
TVR2D
TVR2G
TVR2J
UNITS
Maximum recurrent peak reverse voltage
V_RRM
100
200
400
600
V
Maximum RMS voltage
V_RMS
70
140
280
420
V
Maximum DC blocking voltage
V_DC
100
200
400
600
V
Maximum average forw ard rectified current
I_F(AV)
0.5
A
9.5mm lead length,
@T_A=75
Peak f orw ard surge current
8.3ms single half-sine-w ave
I_FSM
30.0
A
superimposed on rated load @T_J=125
Maximum instantaneous f orw ard voltage
@ 1.0 A
V_F
1.4
V
Maximum reverse current
@T_A=25
I_R
at rated DC blocking voltage @T_A=100
5.0
100.0
A
Maximum reverse recovery time (Note1)
t_rr
1000
ns
Typical junction capacitance (Note2)
C_J
15
pF
Typical thermal resistance
(Note3)
R_θJA
50
̼ͤ
Operating junction temperature range
T_J
- 55---- +150
Storage temperature range
T_STG
NOTE:1. Measured with I_F=0.5A, I_R=1A, I_rr=0.25A.
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
- 55---- + 150
3. Thermal resistance f rom junction to ambient.
E-mail: [e-mail]
1 of 2
Web Site: www.taychipst.com