S5688B Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – SILICON RECTIFIER DIODES

SILICON RECTIFIER DIODES
S5688B THRU S5688N
100V-1000V 1.0A
FEATURES
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Pb / RoHS Free
Mechanical Data
* Case : Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.20 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 50 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
SYMBOL S5688B S5688G S5688J S5688N UNIT
Maximum Repetitive Peak Reverse Voltage
VRRM
100
400
600 1000
V
Maximum RMS voltage
VRMS
70
280
420
700
V
Maximum DC Blocking Voltage
VDC
100
400
600 1000
V
Maximum Average Forward Current
IF(AV)
1.0
A
Maximum Peak Forward Surge Current Single half sine wave
(50Hz) (60Hz) (50Hz) (60Hz)
superimposed on rated load (JEDEC Method)
IFSM
45
49
30
33
A
Maximum Forward Voltage drop per diode at IF = 1.0 A
VF
1.2
V
Repetitive Peak Reverse Current
IRRM
10
µA
Junction Temperature Range
TJ
- 40 to + 150
°C
Storage Temperature Range
TSTG
- 40 to + 150
°C
E-mail: [e-mail]
1 of 2
Web Site: www.taychipst.com