RU3YX Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – FAST RECOVERY RECTIFIER DIODES

HIGH EFFICIENCY RECTIFIER
RU3YX(Z) THRU RU3C(Z)
100V-1000V 1.1A-2.0A
FEATURES
Low cost
Diffused junction
Low leakage
Low forward voltage drop
Easily cleaned with freon, alcohol, lsopropand and
similar solvents
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case: JEDEC DO-15, molded plastic
Terminals: Axial leads,solderable per
MIL-STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.024 ounces, 0.68 grams
Mounting: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
RU3YX RU3 RU3A RU3B
Maximum peak repetitive reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
Peak forw ard surge current
@T_A=75
10ms single half-sine-w ave
superimplsed on rated load @T_J=125
Maximum instantaneous forw ard voltage
@ I_F=I_F(AV)
Maximum reverse current
@T_A=25
at rated DC blocking voltage @T_A=100
Maximum reverse recovery time (Note1)
Typical junction capacitance
(Note2)
Typical thermal resistance
(Note3)
Operating junction temperature range
Storage temperature range
V_RRM 100
400
600
800
V_RMS
70
280
420
560
V_DC
100
400
600
800
I_F(AV)
2.0
1.5
1.1
I_FSM 50.0
V_F
0.95
I_R
t_rr
C_J
R_θJL
T_J
T_STG
300.0
50
50
20.0
1.5
10.0
400.0
100
30
12
- 55 ----- + 150
- 55 ----- + 150
NOTE: 1.Measured with I_F=0.5A, I_R=1A, I_rr=0.25A
2. Measured at 1.0MH_Z and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance junction to ambient.
RU3C UNITS
1000
V
700
V
1000
V
1.5
A
A
2.5
V
A
ns
pF
̼ͤ
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