MBRA120T3 Datasheet, PDF (1/2 Pages) Formosa MS – Chip Schottky Barrier Diodes - Silicon epitaxial planer type

CHIP SCHOTTKY BARRIER DIODES
MBRA120T3 THRU MBRA1100T3
20V-100V 1.0A
FEATURES
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant Epoxy Molding Compound.
For surface mounted applications.
Exceeds environmental standards of MIL-S-19500 /
228
Low leakage current.
MECHANICAL DATA
Case : Molded plastic, JEDECDO-214AC
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by c athode band
Mounting Position : Any
Weight : 0.0015 ounce, 0.05 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS (AT T_A=25^oC unless otherwise noted)
PARAMETER
CONDITIONS
Symbol MIN.
Forward rectified current
See Fig.1
IO
Forward surge current
8.3ms single half sine-wave superimposed on
IFSM
rate load (JEDEC methode)
Reverse current
Thermal resistance
Diode junction capacitance
Storage temperature
VR = VRRM TA = 25^oC
VR = VRRM TA = 125^oC
Junction to ambient
f=1MHz and applied 4vDC reverse voltage
IR
RqJA
CJ
TSTG
-55
TYP.
88
120
MAX.
1.0
UNIT
A
30
A
0.5
10
+150
mA
mA
o_{C / w}
pF
o_C
SYMBOLS
MBRA120T3
MBRA130T3
MBRA140T3
MBRA150T3
MBRA160T3
MBRA180T3
MBRA1100T3
MARKING
CODE
SS12
SS13
SS14
SS15
SS16
SS18
S110
V_RRM ^*1
(V)
20
30
40
50
60
80
100
V_RMS ^*2
(V)
14
21
28
35
42
56
70
V_R ^*3
(V)
20
30
40
50
60
80
100
V_F ^*4
(V)
0.50
0.70
0.85
Operating
temperature
(^oC)
-55 to +125
-55 to +150
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage
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