HER301 Datasheet, PDF (1/2 Pages) Mospec Semiconductor – HIGH EFFICIENCY RECTIFIERS(3.0A,50-400V)

HIGH EFFICIENCY RECTIFIERS
FEATURES
* Low power loss, high efficiency
* Low leakage
* Low forward voltage drop
* High current capability
* High speed switching
* High reliability
* High current surge
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 1.20 grams
HER301 THRU HER308
50V-1000V
3.0A
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ^oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Maximum Ratings and Electrical Characteristics @T_A=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Symbol
VRRM
VRWM
VR
HER HER HER HER HER HER HER HER
301 302 303 304 305 306 307 308
50 100 200 300 400 600 800 1000
Unit
V
RMS Reverse Voltage
VR(RMS)
35
70 140 210 280 420 560 700
V
Average Rectified Output Current
(Note 1)
@T_A = 55°C
IO
3.0
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
IFSM
150
A
rated load (JEDEC Method)
Forward Voltage
@I_F = 3.0A
VFM
Peak Reverse Current
@T_A = 25°C
At Rated DC Blocking Voltage @T_A = 100°C
IRM
Reverse Recovery Time (Note 2)
trr
1.0
1.3
1.7
V
10.0
100
µA
50
75
nS
Typical Junction Capacitance (Note 3)
Cj
80
50
pF
Operating Temperature Range
Tj
-65 to +125
°C
Storage Temperature Range
TSTG
-65 to +150
°C
*Glass passivated forms are available upon request
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5.
3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
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