ERB12-01 Datasheet, PDF (1/2 Pages) Galaxy Semi-Conductor Holdings Limited – PLASTIC SILICON RECTIFIER

PLASTIC SILICON RECTIFIER
ERB12-01 THRU ERB12-10
50V-1000V 1.0A
FEATURES
Low cost
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with Freon,Alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC DO--41,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.012ounces,0.34 grams
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phas e,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
ERB12
-01
ERB12
-02
ERA12
-04
ERB12
-06
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@T_A=75
Peak forw ard surge current
V_RRM
V_RMS
V_DC
I_F(AV)
100
70
100
8.3ms single half-sine-w ave
superimposed on rated load @T_J=125
Maximum instantaneous forw ard voltage
@ 1.0 A
I_FSM
V_F
Maximum reverse current
@T_A=25
I_R
at rated DC blocking voltage @T_A=100
Typical junction capacitance (Note1)
C_J
Typical thermal resistance
(Note2)
Operating junction temperature range
R_θJA
T_J
Storage temperature range
T_STG
NOTE: 1. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
2. Thermal resistance f rom junction to ambient.
200
400
600
140
280
420
200
400
600
1.0
60.0
1.1
5.0
50.0
15
50
- 55---- + 150
- 55 ---- +150
ERB12
-10
1000
700
1000
UNITS
V
V
V
A
A
V
A
pF
̼ͤ
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Web Site: www.taychipst.com