EGF1T Datasheet, PDF (1/2 Pages) Vishay Siliconix – Surface Mount Glass Passivated Ultrafast Rectifier

Surface Mount Glass Passivated Ultrafast Rectifier
EGF1T
1300V 1.0A
FEATURES
• Cavity-free glass-passivated junction
• Ideal for automated placement
• Ultrafast reverse recovery time
• Low switching losses, high efficiency
• Avalanche surge energy capability
• Meets environmental standard MIL-S-19500
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 250 °C
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
MECHANICAL DATA
Case: DO-214BA, molded plastic over glass body
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: Color band denotes cathode end
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking
Maximum average forward rectified current
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
V_RRM
V_RMS
V_DC
I_F(AV)
I_FSM
Non-repetitive avalanche energy at T_A = 25 °C, I_AS = 1 A, L = 30 mH
Operating junction and storage temperature range
E_AS
T_J, T_STG
EGF1T
ET
1300
910
1300
1.0
20
15
- 55 to + 150
UNIT
V
V
V
A
A
mJ
°C
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Maximum instantaneous forward voltage ⁽¹⁾
1.0 A
T_J = 25 °C
V_F
Maximum DC reverse current ⁽²⁾
V_RM
T_J = 25 °C
T_J = 125 °C
I_R
Typical reverse recovery time
I_F = 0.5 A, I_R =1.0 A,
I_rr = 0.25 A
t_rr
Typical junction capacitance
4.0 V, 1 MHz
C_J
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
EGF1T
3.0
5.0
50
75
8.0
UNIT
V
µA
ns
pF
THERMAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
EGF1T
UNIT
Typical thermal resistance ⁽¹⁾
R_θJA
R_θJL
50
20
°C/W
Note:
(1) Thermal resistance from junction to ambient and from junction to lead, P.C.B. mounted on 0.95 x 0.95" (24 x 24 mm) copper pad areas
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