BYW98-200 Datasheet, PDF (1/2 Pages) STMicroelectronics – HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES

HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
FEATURES
VERY LOW CONDUCTION LOSSES
NEGLIGIBLE SWITCHING LOSSES
LOW FORWARD AND REVERSE RECOVERY
TIMES
BYW98-200
200V 3.0A
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
VRRM _{Repetitive peak reverse voltage}
IFRM
Repetitive peak forward current *
tp=5 µs
F=1KHz
.
IF (AV)
Average forward current*
Ta = 75°C
δ = 0.5
IFSM
Surge non repetitive forward current
tp = 10ms
Sinusoidal
Tstg
Storage temperature range
Tj
Maximum operating junction temperature
TL
Maximum lead temperature for soldering during 10s at
4mm from case
Value
200
110
3
70
- 65 to + 150
150
230
Unit
V
A
A
A
°C
°C
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol
IR *
VF **
Parameter
Test Conditions
Reverse leakage
current
Tj = 25°C
Tj = 100°C
VR = VRRM
Forward voltage drop Tj = 25°C
IF = 9A
Tj = 100°C
IF = 3A
Min.
Typ.
0.78
Max.
10
0.5
1.2
0.85
Unit
µA
mA
V
RECOVERY CHARACTERISTICS
Symbol
trr
Qrr
tfr
VFP
Test Conditions
Tj = 25°C
VR = 30V
IF = 1A
dIF/dt = - 50A/µs
Tj = 25°C
VR ≤ 30V
IF = 3A
dIF/dt = - 20A/µs
Tj = 25°C
IF = 3A
Measured at 1.1 x VF max
dIF/dt = - 50A/µs
Tj = 25°C
IF = 3A
dIF/dt = - 50A/µs
Min.
Typ.
Max.
35
Unit
ns
15
nC
20
ns
5
V
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