BYW100-200 Datasheet, PDF (1/2 Pages) STMicroelectronics – HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODE

HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
FEATURES
VERY LOW CONDUCTION LOSSES
NEGLIGIBLE SWITCHING LOSSES
LOW FORWARD AND REVERSE RECOVERY
TIMES
THE SPECIFICATIONS AND CURVES
ENABLE THE DETERMINATION OF trr AND
IRM AT 100°C UNDER USERS CONDITIONS
BYW100-200
200V 1.5A
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Value
Unit
VRRM _{Repetitive peak reverse voltage}
200
V
IFRM _{Repetitive peak forward current *}
tp = 5 µs F = 1KHz
80
A
IF(AV) _{Average forward current *}
Ta = 95°C δ = 0.5
1.5
A
.
IFSM _{Surge non repetitive forward current}
tp=10 ms sinusoidal
50
A
Tstg _{Storage temperature range}
-65 +150
°C
Tj
Maximum operating junction temperature
+ 150
°C
TL
Maximum lead temperature for soldering during 10s at 4mm from
230
°C
case
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
IR *
VF **
Parameter
Reverse leakage
current
Forward voltage drop
Tests conditions
VR = VRRM
Tj = 25°C
Tj = 100°C
IF = 4.5 A
Tj = 25°C
IF = 1.5 A
Tj = 100°C
Min. Typ. Max. Unit
10
µA
0.5 mA
1.2
V
0.78 0.85
RECOVERY CHARACTERISTICS
Symbol
trr
tfr
VFP
Qrr
Tests conditions
IF = 1 A dIF/dt = - 50 A/µs VR = 30 V
IF = 1.5 A dIF/dt = -50 A/µs
Measured at 1.1 x VF max.
IF = 1.5 A dIF/dt = -50 A/µs
IF = 1.5 A dIF/dt = -20 A/µs VR ≤ 30 V
Tj = 25°C
Tj = 25°C
Tj = 25°C
Tj = 25°C
Min. Typ. Max. Unit
35
ns
30
ns
5
V
10
nC
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