BYV26AGP Datasheet, PDF (1/2 Pages) Gulf Semiconductor – SINTERED GLASS JUNCTION FAST SWITCHING PLASTIC RECTIFIER VOLTAGE： 200V to 1000V CURRENT: 1.0A

SINTERED GLASS JUNCTION
FAST SWITCHING PLASTIC RECTIFIER
BYV26AGP THRU BYV26EGP
200V-1000V 1.0A
FEATURES
D High temperature metallurgically bonded construction
Sintered glass cavity free junction
D ^{Capability of meeting environmental standard of}
MIL-S-19500
D ^{High temperature soldering guaranteed}
350°C /10sec/0.375”lead length at 5 lbs tension
D Operate at Ta =55°C with no thermal run away
Typical Ir<0.1µA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
SYMBOL
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC blocking Voltage
Reverse avalanche breakdown voltage
at IR = 0.1 mA
Maximum Average Forward Rectified
Current 3/8”lead length at Ta =55°C
Peak Forward Surge Current 8.3ms single
half sine-wave superimposed on rated load
Maximum Forward Voltage at rated Forward
Current and 50°C
Non-repetitive peak reverse avalanche energy
(Note 1)
Maximum DC Reverse Current Ta =25°C
at rated DC blocking voltage Ta =150°C
Maximum Reverse Recovery Time (Note 2)
Typical Junction Capacitance
(Note 3)
Typical Thermal Resistance
(Note 4)
Storage and Operating Junction Temperature
Vrrm
Vrms
Vdc
V(BR)R (min)
If(av)
Ifsm
Vf
Ersm
Ir
Trr
Cj
Rθja
Tstg, Tj
BYV26
AGP
200
140
200
300
BYV26
BGP
400
280
400
500
BYV26
CGP
600
420
600
700
BYV26
DGP
800
560
800
900
BYV26
EGP
1000
700
1000
1100
1.0
30
2.5
10
5.0
150.0
30
75
15.0
55.0
-65 to +175
units
V
V
V
V
A
A
V
mJ
µA
µA
nS
pF
°C /W
°C
Note: 1.R=400mA; Tj=Tjmax prior to surge; inductive load switched off
2.Reverse Recovery Condition If =0.5A, Ir =1.0A, Irr =0.25A
3.Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc
4.Thermal Resistance from Junction to Ambient at 3/8”lead length, P.C. Board Mounted
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