BYV26 Datasheet, PDF (1/7 Pages) NXP Semiconductors – Fast soft-recovery controlled avalanche rectifiers

Fast soft-recovery
controlled avalanche rectifiers
FEATURES
• Glass passivated
• High maximum operating temperature
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy absorption capability
• Available in ammo-pack.
BYV26 series
200V-1400V 0.65A-1.05
3.81
max
SOD57
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
LIMITING VALUES
SYMBOL
V_{RRM = VR}
I_F(AV)
I_F(AV)
I_FRM
PARAMETER
repetitive peak reverse voltage
BYV26A
BYV26B
BYV26C
BYV26D
BYV26E
BYV26F
BYV26G
average forward current
BYV26A to E
BYV26F and G
average forward current
BYV26A to E
BYV26F and G
repetitive peak forward current
BYV26A to E
BYV26F and G
CONDITIONS
T_tp = 85 °C; lead length = 10 mm;
see Figs 2 and 3;
averaged over any 20 ms period;
see also Figs 10 and 11
T_amb = 60 °C; PCB mounting (see
Fig.19); see Figs 4 and 5;
averaged over any 20 ms period;
see also Figs 10 and 11
T_tp = 85 °C; see Figs 6 and 7
MIN. MAX. UNIT
−
200 V
−
400 V
−
600 V
−
800 V
−
1000 V
−
1200 V
−
1400 V
−
1.00 A
−
1.05 A
−
0.65 A
−
0.68 A
−
10.0 A
−
9.6 A
SYMBOL
PARAMETER
CONDITIONS
I_FRM
repetitive peak forward current
T_amb = 60 °C; see Figs 8 and 9
BYV26A to E
BYV26F and G
I_FSM
E_RSM
non-repetitive peak forward current
non-repetitive peak reverse
avalanche energy
t = 10 ms half sine wave; T_j = T_{j max}
prior to surge; V_R = V_RRMmax
I_R = 400 mA; T_j = T_{j max} prior to
surge; inductive load switched off
T_stg
storage temperature
T_j
junction temperature
see Figs 12 and 13
MIN. MAX. UNIT
−
6.0 A
−
6.4 A
−
30 A
−
10 mJ
−65
+175 °C
−65
+175 °C
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