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| BYG24D Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – FAST AVALANCHE RECTIFIERS | |||
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Fast Avalanche SMD Rectifier
FEATURES
⢠Glass passivated junction
⢠Low reverse current
⢠Soft recovery characteristics
⢠Fast reverse recovery time
⢠Wave and reflow solderable
BYG24D THRU BYG24J
200V-600V 1.5A
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Parameter
Reverse voltage = Repetitive
peak reverse voltage
Test condition
Peak forward surge current
Average forward current
Junction and storage
temperature range
Pulse energy in avalanche
mode, non repetitive (inductive
load switch off)
tp = 10 ms, half-sinewave
I(BR)R = 1 A, Tj = 25 °C
Maximum Thermal Resistance
Part
BYG 24 D
BYG 24 G
BYG 24 J
Symbol
Value
Unit
VR = VRRM
200
V
VR = VRRM
400
V
VR = VRRM
600
V
IFSM
30
A
IFAV
1.5
A
Tj = Tstg - 55 to + 150
°C
ER
20
mJ
Parameter
Junction case
Junction ambient
Test condition
Part
epoxy glass hard tissue 35 µm *
17 mm2 cooper area per
electrode
epoxy glass hard tissue 35
&muMm * 50 mm2 cooper area
per electrode
Symbol
RthJC
RthJA
RthJA
Value
25
150
125
Unit
K/W
K/W
K/W
Electrical Characteristics
Parameter
Forward voltage
Reverse current
Breakdown voltage
Reverse recovery time
Test condition
Part
Symbol Min
IF = 1 A
VF
IF = 1.5 A
VF
VR = VRRM
IR
VR = VRRM, Tj = 100 °C
IR
IR = 100 µA
BYG 24 D
V(BR)R
200
BYG 24 G
V(BR)R
400
BYG 24 J
V(BR)R
600
IF = 0.5 A; IR = 1 A; iR = 0.25 A
trr
Typ.
Max
Unit
1.15
V
1.25
V
1
µA
10
µA
V
V
V
140
ns
E-mail: sales@taychipst.com
1 of 2
Web Site: www.taychipst.com
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