BYG21K Datasheet, PDF (1/2 Pages) Vishay Siliconix – Fast Avalanche SMD Rectifier

Fast Silicon Mesa SMD Rectifier
BYG21K THRU BYG21M
800V-1000V 1.5A
FEATURES
D Glass passivated junction
D Low reverse current
D Soft recovery characteristics
D Fast reverse recovery time
D Good switching characteristics
D Wave and reflow solderable
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Parameter
Reverse voltage
=Repetitive peak reverse voltage
Peak forward surge current
Average forward current
Junction and storage
temperature range
Pulse energy in avalanche mode,
non repetitive
(inductive load switch off)
Test Conditions
t_p=10ms,
half sinewave
I_(BR)R=1A, T_j=25°C
Type
Symbol
Value
Unit
BYG21K V_R=V_RRM
800
V
BYG21M V_R=V_RRM
1000
V
I_FSM
30
A
I_FAV
1.5
A
T_j=T_stg –55...+150 °C
E_R
20
mJ
Maximum Thermal Resistance
Parameter
Junction lead
Junction ambient
Test Conditions
T_L=const.
mounted on epoxy–glass hard tissue
mounted on epoxy–glass hard tissue, 50mm² 35mm Cu
mounted on Al–oxid–ceramic (Al₂O₃), 50mm² 35mm Cu
Symbol
R_thJL
R_thJA
R_thJA
R_thJA
Value
25
150
125
100
Unit
K/W
K/W
K/W
K/W
Electrical Characteristics
Parameter
Forward voltage
Reverse current
Reverse recovery time
Test Conditions
I_F=1A
I_F=1.5A
V_R=V_RRM
V_R=V_RRM, T_j=100°C
I_F=0.5A, I_R=1A, i_R=0.25A
Type
Symbol Min Typ Max Unit
V_F
1.5 V
V_F
1.6 V
I_R
1 mA
I_R
10 mA
t_rr
120 ns
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