BYG10D Datasheet, PDF (1/2 Pages) Vishay Siliconix – Standard Avalanche SMD Rectifier

Silicon Mesa SMD Rectifier
FEATURES
D Controlled avalanche characteristics
D Glass passivated junction
D Low reverse current
D High surge current capability
D Wave and reflow solderable
BYG10D THRU BYG10M
200V-1000V 1.5A
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Parameter
Reverse voltage
=Repetitive peak reverse voltage
Test Conditions
Peak forward surge current
Average forward current
Junction and storage
temperature range
Pulse energy in avalanche mode,
non repetitive
(inductive load switch off)
t_p=10ms,
half sinewave
I_(BR)R=1A, T_j=25°C
Maximum Thermal Resistance
Type
Symbol
Value
Unit
BYG10D V_R=V_RRM
200
V
BYG10G V_R=V_RRM
400
V
BYG10J V_R=V_RRM
600
V
BYG10K V_R=V_RRM
800
V
BYG10M V_R=V_RRM
1000
V
I_FSM
30
A
I_FAV
1.5
A
T_j=T_stg –55...+150 °C
E_R
20
mJ
Parameter
Junction lead
Junction ambient
Test Conditions
T_L=const.
mounted on epoxy–glass hard tissue
mounted on epoxy–glass hard tissue, 50mm² 35mm Cu
mounted on Al–oxid–ceramic (Al₂O₃), 50mm² 35mm Cu
Symbol
R_thJL
R_thJA
R_thJA
R_thJA
Value
25
150
125
100
Unit
K/W
K/W
K/W
K/W
Electrical Characteristics
Parameter
Forward voltage
Reverse current
Reverse recovery time
Test Conditions
I_F=1A
I_F=1.5A
V_R=V_RRM
V_R=V_RRM, T_j=100°C
I_F=0.5A, I_R=1A, i_R=0.25A
Type _{Symbol Min Typ Max Unit}
V_F
1.1 V
V_F
1.15 V
I_R
1 mA
I_R
10 mA
t_rr
4 ms
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