3DL41A Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – EPITAXIAL JUNCTION TYPE (SWITCHING TYPE POWER SUPPLY APPLICATIONS)

SWITCHING TYPE POWER SUPPLY APPLICATION
FEATURES
D Average Forward Current
D _{Repetitive Peak Reverse Voltage}
D _{Very Fast Reverse-Recovery Time}
D Low Forward Voltage
D _{Available to Raduce Switching Losses and Output Noise}
3DL41A
200V 3.0A
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
CHARACTERISTIC
SYMBOL
RATING
UNIT
Repetitive Peak Reverse Voltage
V _RRM
200
V
Average Forward Current
I _F(AV)
3.0
A
Peak One Cycle Surge Forward
80(50Hz)
Current(Non-Repetitive)
I _FSM
A
88(60Hz)
Junction Temperature
T_j
-40~150
°C
Storage Temperature Range
T_stg
-40~150
°C
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
SYMBOL
Peak Forward Voltage
V_FM
Repetitive Peak Reverse Current _{I RRM}
TEST CONDITION
I _{FM =3.0A}
V_{RRM =200V}
Reverse Recvery Time
Forward Recovery Time
Thermal Resistance
t _rr
I _F =1A, _{di/dt=-30A/us}
t _fr
I _{F =1A}
R _{th(j-a) Junction to Ambient}
Thermal Resistance
R _th(j-l)
Junction to Lead
MIN TYPE MAX UNIT
- - 0.98 ^V
- _{- 100 uA}
- _{- 35}
ns
- - ^{100 ns}
- - ₅₇ °C/W
- - ₁₈ °C/W
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