1SV121 Datasheet, PDF (1/2 Pages) Hitachi Semiconductor – Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator

SILICON EPITAXIAL PLANAR PIN DIODE
FEATURES
• Low capacitance.(C=0.7pF max)
• Small glass package (MHD) enables easy
mounting and high reliability.
1SV121
400V 1.0A
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (Ta = 25°C)
Item
Reverse voltage
Forward current
Power dissipation
Junction temperature
Storage temperature
Symbol
V_R
I_F
P_d
T_j
Tstg
Value
Unit
100
V
100
mA
250
mW
175
°C
-65 to +17
°C
Electrical Characteristics (Ta = 25°C)
Ite
Symbol Min Typ
Forward voltage
V_F —
—
Reverse current
I_R
—
—
Capacitance
C
——
Forward resistance
r _f1
1.0 —
r _f2
—
—
Max Unit Test Condition
1.1
V I_F= 50 mA
100 nA V_R= 30 V
0.7
pF V_R = 50 V, f = 1 MHz
—
KΩ I_F = 10 µA, f = 100 MHz
10
Ω
I_F = 10 mA, f = 100 MHz
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