1NH42 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – FAST RECOVERY (SWITCHING TYPE POWER SUPPLY APPLICATIONS)

SWITCHING TYPE POWER SUPPLY APPLICATIONS
1NH41 THRU 1NH42
1000V 1.0A
FEATURES
D Repetitive Peak Reverse Voltage
D Average Forward Current
D _{Reverse Recovery Time}
1NH41
1NH42
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
CHARACTERISTIC
SYMBOL
RATING
UNIT
Repetitive Peak Reverse Voltage
V _RRM
1000
V
Average Forward Current
I _F(AV)
1.0
A
Peak One Cycle Surge Forward
30(50Hz)
I _FSM
A
Current(Non-Repetitive)
33(60Hz)
Junction Temperature
T_j
-40~150
°C
Storage Temperature Range
T_stg
-40~150
°C
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
SYMBOL
TEST CONDITION
Peak Forward Voltage
Repetitive Peak Reverse Current
V _FM
I _RRM
V _FM =1.0A
V_RRM =1000V
Reverse Recvery Time
Forward Recovery Time
t _rr
I _F =1A _{, di/dt=-30A/us}
t _fr
I _{F =1A}
Thermal Resistance
R _{th(j a)}
Junction to Ambient
MIN
TYPE
MAX
1NH41 ^1NH42
UNIT
- - 1.3
- - ₁₀
1.3
V
10 _uA
- _{- 400 400 ns}
- - 1000 850 ^ns
- - ₇₅
98 ^°C/W
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