LMV721-N Datasheet, PDF (1/27 Pages) Texas Instruments – 10MHz, Low Noise, Low Voltage, and Low Power Operational Amplifier

LMV721-N, LMV722-N
www.ti.com
SNOS414I – AUGUST 1999 – REVISED AUGUST 2013
LMV721-N/LMV722 10MHz, Low Noise, Low Voltage, and Low Power Operational Amplifier
Check for Samples: LMV721-N, LMV722-N
FEATURES
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•2 (For Typical, 5 V Supply Values; Unless
Otherwise Noted)
• Ensured 2.2V and 5.0V Performance
• Low Supply Current LMV721-N/2
930µA/Amplifier at 2.2V
• High Unity-Gain Bandwidth 10MHz
• Rail-to-Rail Output Swing
– at 600Ω Load 120mV from Either Rail at
2.2V
– at 2kΩ Load 50mV from Either Rail at 2.2V
• Input Common Mode Voltage Range Includes
Ground
• Silicon Dust, SC70-5 Package 2.0x2.0x1.0 mm
• Input Voltage Noise 9 nV/√Hz at f = 1KHz
APPLICATIONS
• Cellular an Cordless Phones
• Active Filter and Buffers
• Laptops and PDAs
• Battery Powered Electronics
DESCRIPTION
The LMV721-N (Single) and LMV722 (Dual) are low
noise, low voltage, and low power op amps, that can
be designed into a wide range of applications. The
LMV721-N/LMV722 has a unity gain bandwidth of
10MHz, a slew rate of 5V/us, and a quiescent current
of 930uA/amplifier at 2.2V.
The LMV721-N/722 are designed to provide optimal
performance in low voltage and low noise systems.
They provide rail-to-rail output swing into heavy
loads. The input common-mode voltage range
includes ground, and the maximum input offset
voltage are 3.5mV (Over Temp) for the LMV721-
N/LMV722. Their capacitive load capability is also
good at low supply voltages. The operating range is
from 2.2V to 5.5V.
The chip is built with TI's advanced Submicron
Silicon-Gate BiCMOS process. The single version,
LMV721-N, is available in 5 pin SOT-23 and a SC70
(new) package. The dual version, LMV722, is
available in an SOIC-8 and VSSOP-8 package.
Typical Application
Figure 1. A Battery Powered Microphone Preamplifier
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
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2
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
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