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| TFP70N06 Datasheet, PDF (1/8 Pages) Tak Cheong Electronics (Holdings) Co.,Ltd – N-Channel Power MOSFET 70A, 60V, 0.014Ω | |||
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TAK CHEONG
SEMICONDUCTOR
N-Channel Power MOSFET
70A, 60V, 0.014â¦
GENERAL DESCRIPTION
This N-Channel MOSFET is used an advanced termination
scheme to provide enhanced voltage-blocking capability
without degrading performance over time. This advanced
technology has been especially tailored to minimize on-state
resistance, provide superior switching performance. This
device is well suited for high efficiency switched mode power
suppliers, active power factor correction, electronic lamp
ballasts based half bridge topology.
FEATURES
â Avalanche energy specified
â Gate Charge (Typical 70nC)
â High Ruggedness
ABSOLUTE MAXIMUM RATINGS (TC =25°C, unless otherwise noted )
Symbol
Parameter
VDSS
Drain- Source Voltage
VGSS
Gate-Source Voltage
ID
Drain Current
IDM
Drain Current Pulsed
Power Dissipation
PD
Derating Factor above 25â
(Note 2)
EAS
Single Pulsed Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
TJ
Operating Junction Temperature
Tstg
Storage Temperature Range
Notes:
1. L=250uH, IAS=70A, VDD=25V, RG=0Ω, Starting TJ=25â.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. ISD ⤠70A, di/dt ⤠300A/us, VDD ⤠BVDSS, Starting TJ=25â.
THERMAL CHARACTERISTICS
Symbol
Parameter
RθJC
RθJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
1
2
3
1 = Gate
2 = Drain
3 = Source
TO-220AB
DEVICE MARKING DIAGRAM
L xxyy
TFP
XXXX
L = Tak Cheong Logo
xxyy = Monthly Date Code
TFPXXXX = Device Type
D
G
S
Value
60
±25
70
280
158
1.05
800
7.0
150
- 55 to +150
Units
V
V
A
A
W
W/â
mJ
V/ns
â
â
Value
0.95
62.5
Unit
â/W
â/W
Number: DB-229
August 2011, Revision A
Page 1
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