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| TFP50N06 Datasheet, PDF (1/8 Pages) Tak Cheong Electronics (Holdings) Co.,Ltd – N-Channel Power MOSFET 50A, 60V, 0.023Ω | |||
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®
TAK CHEONG
SEMICONDUCTOR
N-Channel Power MOSFET
50A, 60V, 0.023â¦
GENERAL DESCRIPTION
This N-Channel MOSFET is used an advanced termination
scheme to provide enhanced voltage-blocking capability
without degrading performance over time. This advanced
technology has been especially tailored to minimize on-state
resistance, provide superior switching performance. This
device is well suited for high efficiency switched mode power
suppliers, active power factor correction, electronic lamp
ballasts based half bridge topology.
FEATURES
â Avalanche energy specified
â Gate Charge (Typical 36nC)
â High Ruggedness
ABSOLUTE MAXIMUM RATINGS (TC =25°C, unless otherwise noted )
Symbol
Parameter
VDSS
Drain- Source Voltage
VGSS
Gate-Source Voltage
ID
Drain Current
IDM
Drain Current Pulsed
Power Dissipation
PD
Derating Factor above 25â
(Note 2)
EAS
Single Pulsed Avalanche Energy
(Note 1)
EAR
Repetitive Avalanche Energy
(Note 2)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
TJ
Operating Junction Temperature
Tstg
Storage Temperature Range
Notes:
1. L=300uH, IAS=50A, VDD=25V, RG=50Ω, Starting TJ=25â.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. ISD ⤠50A, di/dt ⤠300A/us, VDD ⤠BVDSS, Starting TJ=25â.
THERMAL CHARACTERISTICS
Symbol
Parameter
RθJC
RθJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Number: DB-228
August 2011, Revision A
1
2
3
1 = Gate
2 = Drain
3 = Source
TO-220AB
DEVICE MARKING DIAGRAM
L xxyy
TFP
XXXX
L = Tak Cheong Logo
xxyy = Monthly Date Code
TFPXXXX = Device Type
D
G
S
Value
60
±25
50
200
120
0.8
642
12
7.0
150
- 55 to +150
Units
V
V
A
A
W
W/â
mJ
mJ
V/ns
â
â
Value
1.25
62.5
Unit
â/W
â/W
Page 1
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