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TFP4N65 Datasheet, PDF (1/8 Pages) Tak Cheong Electronics (Holdings) Co.,Ltd – N-Channel Power MOSFET 3.9A, 650V, 3.0Ω | |||
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TAK CHEONG
SEMICONDUCTOR
N-Channel Power MOSFET
3.9A, 650V, 3.0â¦
General Description
The N-Channel MOSFET is used an advanced termination
scheme to provide enhanced voltage-blocking capability
without degrading performance over time. This advanced
technology has been especially tailored to minimize on-state
resistance, provide superior switching performance. This
device is well suited for high efficiency switched mode power
suppliers, active power factor correction, electronic lamp
ballasts based half bridge topology.
Features
â Robust high voltage termination
â Avalanche energy specified
â Diode is characterized for use in bridge circuits
â Source to Drain diode recovery time comparable to a
discrete fast recovery diode.
ABSOLUTE MAXIMUM RATINGS (TC =25°C, unless otherwise noted )
Symbol
Parameter
VDSS
VGSS
ID
IDM
Drain- Source Voltage
Gate-Source Voltage
Drain Current
Drain Current Pulsed
Power Dissipation
PD
Derating factor above 25â
(Note 2)
EAS
Single Pulsed Avalanche Energy
(Note 1)
TJ
Operating Junction Temperature
Tstg
Storage Temperature Range
Notes:
1. L=19mH, IAS=3.9A, VDD=50V, RG=50Ω, Starting TJ=25â
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
THERMAL CHARACTERISTICS
Symbol
Parameter
RθJC
RθJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
1
2
3
1 = Gate
2 = Drain
3 = Source
TO-220AB
DEVICE MARKING DIAGRAM
L xxyy
TFP
XXXX
L = Tak Cheong Logo
xxyy = Monthly Date Code
TFPXXXX = Device Type
D
G
S
Value
650
±30
3.9
15.6
98
0.78
157
150
- 55 to +150
Units
V
V
A
A
W
W/â
mJ
â
â
Value
1.28
62.5
Unit
â/W
â/W
Number: DB-184
March 2010, Revision B
Page 1
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