TFF50N06 Datasheet, PDF (1/8 Pages) Tak Cheong Electronics (Holdings) Co.,Ltd – N-Channel Power MOSFET 28A, 60V, 0.023Ω

®
TAK CHEONG
SEMICONDUCTOR
N-Channel Power MOSFET
28A, 60V, 0.023Ω
GENERAL DESCRIPTION
The N-Channel MOSFET is used an advanced termination
scheme to provide enhanced voltage-blocking capability
without degrading performance over time. This advanced
technology has been especially tailored to minimize on-state
resistance, provide superior switching performance. This
device is well suited for high efficiency switched mode power
suppliers, active power factor correction, electronic lamp
ballasts based half bridge topology.
FEATURES
● Avalanche energy specified
● Gate Charge (Typical 36nC)
● High Ruggedness.
ABSOLUTE MAXIMUM RATINGS (T_C =25°C, unless otherwise noted )
Symbol
Parameter
VDSS
VGSS
ID
IDM
Drain- Source Voltage
Gate-Source Voltage
Drain Current
Drain Current Pulsed
Power Dissipation
PD
Derating Factor above 25℃
(Note 2)
EAS
EAR
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
(Note 1)
(Note 2)
dv/dt
Peak Diode Recovery dv/dt
TJ
Operating Junction Temperature
Tstg
Storage Temperature Range
Notes:
1. L=300uH, I_AS=50A, V_DD=25V, R_G=50Ω, Starting T_J=25℃
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. I_SD ≤ 50A, di/dt ≤ 300A/us, V_DD ≤ BV_DSS, Starting T_J=25℃
THERMAL CHARACTERISTICS
Symbol
Parameter
R_θJC
R_θJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Number: DB-230
August 2011, Revision A
1
2
3
1 = Gate
2 = Drain
3 = Source
TO-220FP
DEVICE MARKING DIAGRAM
L xxxx
TFF
XXXX
L = Tak Cheong Logo
xxyy = Monthly Date Code
TFFXXXX = Device Type
D
G
S
Value
60
±25
28
112
47
0.31
643
4.7
7.0
150
- 55 to +150
Units
V
V
A
A
W
W/℃
mJ
mJ
V/ns
℃
℃
Value
3.22
62.5
Unit
℃/W
℃/W
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