TFF2N60A Datasheet, PDF (1/8 Pages) Tak Cheong Electronics (Holdings) Co.,Ltd – N-Channel Power MOSFET 2.1A, 600V, 5.6Ω

®
TAK CHEONG
N-Channel Power MOSFET
2.1A, 600V, 5.6Ω
General Description
The N-Channel MOSFET is used an advanced termination
scheme to provide enhanced voltage-blocking capability
without degrading performance over time. This advanced
technology has been especially tailored to minimize on-state
resistance, provide superior switching performance. This
device is well suited for high efficiency switched mode power
suppliers, active power factor correction, electronic lamp
ballasts based half bridge topology.
Features
● Robust high voltage termination
● Avalanche energy specified
● Diode is characterized for use in bridge circuits
● Source to Drain diode recovery time comparable to a
discrete fast recovery diode.
ABSOLUTE MAXIMUM RATINGS (T_C =25°C, unless otherwise noted )
Symbol
Parameter
VDSS
VGSS
ID
IDM
Drain- Source Voltage
Gate-Source Voltage
Drain Current
Drain Current Pulsed
Power Dissipation
PD
Derating factor above 25℃
(Note 2)
EAS
Single Pulsed Avalanche Energy
(Note 1)
EAR
Repetitive Avalanche Energy
(Note 2)
TJ
Operating Junction Temperature
Tstg
Storage Temperature Range
Notes:
1. L=75mH, I_AS=2.1A, V_DD=50V, R_G=50Ω, Starting T_J=25℃
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
THERMAL CHARACTERISTICS
Symbol
Parameter
R_θJC
R_θJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Number: DB-194
March 2010, Revision B
SEMICONDUCTOR
1
2
3
TO-220FP
1 = Gate
2 = Drain
3 = Source
DEVICE MARKING DIAGRAM
L xxxx
TFF
XXXX
L = Tak Cheong Logo
xxyy = Monthly Date Code
TFFXXXX = Device Type
D
G
S
Value
600
±30
2.1
8.4
26
0.39
180
4.8
150
- 55 to +150
Units
V
V
A
A
W
W/℃
mJ
mJ
℃
℃
Value
4.81
62.5
Unit
℃/W
℃/W
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