TCMBR20100CT Datasheet, PDF (1/2 Pages) Tak Cheong Electronics (Holdings) Co.,Ltd – 20A SCHOTTKY BARRIER DIODE Dual High Voltage Schottky Rectifier

TAK CHEONG ^®
SEMICONDUCTOR
20A SCHOTTKY BARRIER DIODE
Dual High Voltage Schottky Rectifier
Specification Features:
ƒ High Voltage Wide Range Selection, 100V, 150V & 200V
ƒ High Switching Speed Device
ƒ Low Forward Voltage Drop
ƒ Low Power Loss and High Efficiency
ƒ Guard Ring for Over-voltage Protection
ƒ High Surge Capability
ƒ RoHS Compliant
ƒ Matte Tin(Sn) Lead Finish
ƒ Terminal Leads Surface is Corrosion Resistant
and can withstand to 260°C Wave Soldering or
per MIL-STD-750, Method 2026.
1
2
3
TO-220AB
1. Anode
2. Cathode
3. Anode
POLARITY CONFIGURATION
DEVICE MARKING DESIGNATION:
Line 1 & 2 = Device Name
Line 3 = Datecode
Line 4 = Polarity
MAXIMUM RATINGS (Per Leg, unless otherwise specified )
Symbol
Parameter
TCMBR20100CT
TCMBR20150CT
TCMBR20200CT
V_RRM Maximum Repetitive Reverse Voltage
V_RWM Working Peak Reverse Voltage
100
150
200
VR
Maximum DC Reverse Voltage
Average Rectified Forward Current
IF(AV)
Per Leg
10
Per Package
20
I_FSM
Non-repetitive Peak Forward Surge Current
8.3mS Single Phase @ Rated Load
150
TSTG
Storage Temperature Range
-65 to +175
TJ
Operating Junction Temperature
+175
These ratings are limiting values above which the serviceability of the diode may be impaired.
Units
V
A
A
°C
°C
THERMAL CHARACTERISTICS
Symbol
Parameter
TA = 25°C unless otherwise noted
Value
Units
Maximum Thermal Resistance,
RθJC
Junction-to-Case
2.0
°C/W
ELECTRICAL CHARACTERISTICS (Per Diode )
Symbol
Parameter
Test Condition
(Note 1)
TA = 25°C unless otherwise noted
TCMBR20100CT TCMBR20150CT
Min
Max
Min
Max
IR
V_F
Note/s:
1.
Reverse Current
Forward Voltage
@ rated VR
IF = 10A
IF = 20A
Tested under pulse condition of 300µS.
---
200
---
200
0.800
0.850
---
---
0.900
0.950
TCMBR20200CT
Min
Max
---
200
0.900
---
1
Units
µA
V
May 2008 Release, Revision C
Page 1