TCBAW76 Datasheet, PDF (1/4 Pages) Tak Cheong Electronics (Holdings) Co.,Ltd – 500 mW DO-35 Hermetically Sealed Glass Fast Switching Diodes

®
TAK CHEONG
500 mW DO-35 Hermetically
Sealed Glass Fast Switching
Diodes
Absolute Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
PD
Power Dissipation
TSTG
Storage Temperature Range
500
mW
-65 to +150
°C
T_J
Operating Junction Temperature
+175
°C
WIV
Working Inverse Voltage
75
V
IO
Average Rectified Current
150
mA
IFM
Non-repetitive Peak Forward Current
450
mA
I_FSURGE
Peak Forward Surge Current
(Pulse Width = 1.0 µsecond)
2
A
These ratings are limiting values above which the serviceability of the diode may be impaired.
Specification Features:
ƒ Fast Switching Device (TRR <4.0 nS)
ƒ DO-35 Package (JEDEC)
ƒ Through-Hole Device Type Mounting
ƒ Hermetically Sealed Glass
ƒ Compression Bonded Construction
ƒ All External Surfaces Are Corrosion Resistant And Leads Are Readily Solderable
ƒ RoHS Compliant
ƒ Solder Hot Dip Tin (Sn) Terminal Finish
ƒ Cathode Indicated By Polarity Band
SEMICONDUCTOR
AXIAL LEAD
DO35
DEVICE MARKING DIAGRAM
L
AW
76
L
: Logo
Cathode
Anode
ELECTRICAL SYMBOL
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Condition
BV
Breakdown Voltage
IR
Reverse Leakage Current
VF
Forward Voltage
TRR
Reverse Recovery Time
C
Capacitance
IR=5µA
VR=50V
VR=50V TA = 150°
IF=100mA
I_F=I_R=10mA, R_L=100Ω, I_RR=1mA
I_F= 10mA, V_R=6V, R_L=100Ω, I_RR=1mA
VR=0V, f=1MHZ
Limits
Min Max
75
100
100
1.0
4
2
4
Unit
Volts
nA
uA
Volts
nS
pF
Number: DB-037
June 2008 / D
Page 1