TCBAV19 Datasheet, PDF (1/2 Pages) Tak Cheong Electronics (Holdings) Co.,Ltd – 500 mW DO-35 Hermetically Sealed Glass - High Voltage Switching Diodes

®
TAK CHEONG
SEMICONDUCTOR
500 mW DO-35 Hermetically
Sealed Glass – High Voltage
Switching Diodes
Absolute Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VRRM
Maximum Repetitive Reverse Voltage
250
V
T_STG
Storage Temperature Range
-65 to +200
°C
T_J
Operating Junction Temperature
+175
°C
I_{F (AV)}
Average Rectified Forward Current
200
mA
IFSM
Non-repetitive Peak Forward Current
Pulse Width = 1.0 Second
1.0
A
Pulse Width = 1.0 µsecond
4.0
A
These ratings are limiting values above which the serviceability of the diode may be impaired.
Thermal Characteristics
Symbol
Parameter
Value
Units
PD
Power Dissipation
500
R_θJA
Thermal Resistance, Junction to Ambient
300
Specification Features:
mW
°C/W
ƒ DO-35 Package (JEDEC)
ƒ Through-Hole Device Type Mounting
ƒ Hermetically Sealed Glass
ƒ Compression Bonded Construction
ƒ All external surfaces are corrosion resistant and leads are readily solderable
ƒ RoHS Compliant
ƒ Solder hot dip Tin (Sn) lead finish
ƒ Cathode indicated by polarity band
AXIAL LEAD
DO35
DEVICE MARKING DIAGRAM
L
BA
Vx
x
L
: Logo
Device Code : TCBAVxx
Cathode
Anode
ELECTRICAL SYMBOL
Electrical Characteristics
Symbol
T_A = 25°C unless otherwise noted
Parameter
Test Condition
B_V
Breakdown Voltage
I_R
Reverse Leakage Current
V_F
Forward Voltage
T_RR
Reverse Recovery Time
C
Capacitance
TCBAV19
TCBAV20
TCBAV21
TCBAV19
TCBAV20
TCBAV21
I_R=100µA
V_R=100V
V_R=150V
V_R=200V
I_F=100mA
I_F=200mA
I_F=I_R=30mA
RL=100Ω
IRR=3mA
VR=0V, f=1MHZ
Limits
Min Max
120
---
200
---
250
---
---
100
---
100
---
100
---
1.0
---
1.25
---
50
---
5.0
Unit
Volts
Volts
Volts
nA
nA
nA
Volts
Volts
nS
pF
October 2006 / B
Page 1