TC1SS244M_08 Datasheet, PDF (1/4 Pages) Tak Cheong Electronics (Holdings) Co.,Ltd – 300 mW DO-34 Hermetically Sealed Glass - High Voltage Switching Diodes

®
TAK CHEONG
300 mW DO-34 Hermetically
Sealed Glass - High Voltage
Switching Diodes
Absolute Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VRRM
Maximum Repetitive Reverse Voltage
250
V
T_STG
Storage Temperature Range
-65 to +150
°C
T_J
Operating Junction Temperature
+150
°C
I_{F (AV)}
Average Rectified Forward Current
200
mA
IFSM
Non-repetitive Peak Forward Current
Pulse Width = 1.0 Second
1.0
A
Pulse Width = 1.0 µsecond
4.0
A
These ratings are limiting values above which the serviceability of the diode may be impaired.
Thermal Characteristics
Symbol
Parameter
Value
Units
P_D
Power Dissipation
Specification Features:
300
mW
ƒ DO-34 Package (JEDEC)
ƒ Through-Hole Device Type Mounting
ƒ Hermetically Sealed Glass
ƒ Compression Bonded Construction
ƒ All External Surfaces Are Corrosion Resistant And Lads Are Readily Solderable
ƒ RoHS Compliant
ƒ Solder Hot Dip Tin (Sn) Terminal Finish
ƒ Cathode Indicated By Polarity Band
SEMICONDUCTOR
AXIAL LEAD
DO34
DEVICE MARKING DIAGRAM
L
: Logo
Device Code : TC1SS244M
Cathode
Anode
ELECTRICAL SYMBOL
Electrical Characteristics
Symbol
T_A = 25°C unless otherwise noted
Parameter
Test Condition
B_V
Breakdown Voltage
I_R
Reverse Leakage Current
V_F
Forward Voltage
T_RR
Reverse Recovery Time
C
Capacitance
I_R=100µA
V_R=220V
I_F=200mA
I_F=I_R=30mA
R_L=100Ω
I_RR=3mA
VR=0V, f=1MHZ
Limits
Min Max
250
---
---
10
---
1.5
---
50
---
5.0
Unit
Volts
µA
Volts
nS
pF
Number: DB-051
June 2008 / C
Page 1