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TC1SS244M Datasheet, PDF (1/2 Pages) Tak Cheong Electronics (Holdings) Co.,Ltd – 300 mW DO-34 Hermetically Sealed Glass - High Voltage Switching Diodes
®
TAK CHEONG
300 mW DO-34 Hermetically
Sealed Glass - High Voltage
Switching Diodes
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VRRM
Maximum Repetitive Reverse Voltage
250
V
TSTG
Storage Temperature Range
-65 to +200
°C
TJ
Operating Junction Temperature
+175
°C
IF (AV)
Average Rectified Forward Current
200
mA
IFSM
Non-repetitive Peak Forward Current
Pulse Width = 1.0 Second
1.0
A
Pulse Width = 1.0 µsecond
4.0
A
These ratings are limiting values above which the serviceability of the diode may be impaired.
Thermal Characteristics
Symbol
Parameter
Value
Units
PD
Power Dissipation
Specification Features:
300
mW
ƒ DO-34 Package (JEDEC)
ƒ Through-Hole Device Type Mounting
ƒ Hermetically Sealed Glass
ƒ Compression Bonded Construction
ƒ All external surfaces are corrosion resistant and leads are readily solderable
ƒ RoHS Compliant
ƒ Solder hot dip Tin (Sn) lead finish
ƒ Cathode indicated by polarity band
SEMICONDUCTOR
AXIAL LEAD
DO34
DEVICE MARKING DIAGRAM
L
: Logo
Device Code : TC1SS244M
Cathode
Anode
ELECTRICAL SYMBOL
Electrical Characteristics
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Condition
BV
Breakdown Voltage
IR
Reverse Leakage Current
VF
Forward Voltage
TRR
Reverse Recovery Time
C
Capacitance
IR=100µA
VR=220V
IF=200mA
IF=IR=30mA
RL=100Ω
IRR=3mA
VR=0V, f=1MHZ
Limits
Min Max
250
---
---
10
---
1.5
---
50
---
5.0
Unit
Volts
µA
Volts
nS
pF
October 2006 / B
Page 1