TC1SS133M Datasheet, PDF (1/2 Pages) Tak Cheong Electronics (Holdings) Co.,Ltd – 300 mW DO-34 Hermetically Sealed Glass Switching Diodes

®
TAK CHEONG
SEMICONDUCTOR
300 mW DO-34 Hermetically
Sealed Glass Switching
Diodes
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
P_D
Power Dissipation
300
mW
TSTG
Storage Temperature Range
-65 to +150
°C
T_J
Operating Junction Temperature
+175
°C
WIV
Working Inverse Voltage
90
V
I_O
Average Rectified Current
150
mA
I_FM
Non-repetitive Peak Forward Current
450
mA
IFSURGE
Peak Forward Surge Current
(Pulse Width = 1.0 µsecond)
2
A
These ratings are limiting values above which the serviceability of the diode may be impaired.
Specification Features:
ƒ Fast Switching Device (T_RR <4.0 nS)
ƒ DO-34 Package (JEDEC DO-204)
ƒ Through-Hole Device Type Mounting
ƒ Hermetically Sealed Glass
ƒ Compression Bonded Construction
ƒ All External Surfaces Are Corrosion Resistant And Lads Are Readily Solderable
ƒ RoHS Compliant
ƒ Solder Hot Dip Tin (Sn) Terminal Finish
ƒ Cathode Indicated By Polarity Band
AXIAL LEAD
DO34
DEVICE MARKING DIAGRAM
L
: Logo
Device Code : TC1SS133M
Cathode
Anode
ELECTRICAL SYMBOL
Electrical Characteristics
Symbol
T_A = 25°C unless otherwise noted
Parameter
Test Condition
B_V
Breakdown Voltage
I_R
Reverse Leakage Current
V_F
Forward Voltage
T_RR
Reverse Recovery Time
C
Capacitance
I_R=500nA
V_R=80V
I_F=100mA
I_F=I_R=10mA
RL=100Ω
I_RR=1mA
VR=0V, f=1MHZ
Limits
Min Max
80
500
1.2
Unit
Volts
nA
Volts
4
nS
4
pF
February 2008 / C
Page 1