TC1N4148_10 Datasheet, PDF (1/4 Pages) Tak Cheong Electronics (Holdings) Co.,Ltd – 500 mW DO-35 Hermetically Sealed Glass Fast Switching Diodes

®
TAK CHEONG
SEMICONDUCTOR
500 mW DO-35 Hermetically
Sealed Glass Fast Switching
Diodes
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
PD
Power Dissipation
500
mW
TSTG
Storage Temperature Range
-65 to +150
°C
TJ
Operating Junction Temperature
+150
°C
WIV
Working Inverse Voltage
75
V
IO
Average Rectified Current
150
mA
IFM
Non-repetitive Peak Forward Current
450
mA
IFSURGE
Peak Forward Surge Current
(Pulse Width = 1.0 µsecond)
2
A
These ratings are limiting values above which the serviceability of the diode may be impaired.
AXIAL LEAD
DO35
DEVICE MARKING DIAGRAM
L
xx
xx
L
: Logo
TC1Nxxxx : Device Code
Specification Features:
 Fast Switching Device (TRR <4.0 nS)
 DO-35 Package (JEDEC)
 Through-Hole Device Type Mounting
 Hermetically Sealed Glass
 Compression Bonded Construction
 All External Surfaces Are Corrosion Resistant And Leads Are Readily Solderable
 RoHS Compliant
 Solder Hot Dip Tin (Sn) Terminal Finish
 Cathode Indicated By Polarity Band
Cathode
Anode
ELECTRICAL SYMBOL
Electrical Characteristics
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Condition
BV
Breakdown Voltage
IR
Reverse Leakage Current
VF
Forward Voltage
TC1N4448, TC1N914B
TC1N4148
TC1N4448, TC1N914B
TRR
Reverse Recovery Time
C
Capacitance
IR=100µA
IR=5µA
VR=20V
VR=75V
IF=5mA
IF=10mA
IF=100mA
IF=10mA, VR=6V
RL=100
IRR=1mA
VR=0V, f=1MHZ
Limits
Min Max
100
75
25
5
0.62 0.72
1.0
1.0
4
4
Unit
Volts
nA
µA
Volts
nS
pF
Number: DB-036
Jan 2010 / G
Page 1