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TC1N4148M_10 Datasheet, PDF (1/4 Pages) Tak Cheong Electronics (Holdings) Co.,Ltd – 300 mW DO-34 Hermetically Sealed Glass Fast Switching Diodes | |||
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TAK CHEONG
SEMICONDUCTOR
300 mW DO-34 Hermetically
Sealed Glass Fast Switching
Diodes
AXIAL LEAD
DO34
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
PD
Power Dissipation
300
mW
TSTG
Storage Temperature Range
-65 to +150
°C
TJ
Operating Junction Temperature
+150
°C
WIV
Working Inverse Voltage
75
V
IO
Average Rectified Current
150
mA
IFM
Non-repetitive Peak Forward Current
450
mA
IFSURGE
Peak Forward Surge Current
(Pulse Width = 1.0 µsecond)
2
A
These ratings are limiting values above which the serviceability of the diode may be impaired.
Specification Features:
DEVICE MARKING DIAGRAM
(TC1N4148M)
L
: Logo
DEVICE MARKING DIAGRAM
(TC1N4448M / TC1N914BM)
L
: Logo
Device Code : TC1NxxxxM
ï§ Fast Switching Device (TRR <4.0 nS)
ï§ DO-34 Package (JEDEC DO-204)
ï§ Through-Hole Device Type Mounting
ï§ Hermetically Sealed Glass
ï§ Compression Bonded Construction
ï§ All External Surfaces Are Corrosion Resistant And Lads Are Readily Solderable
ï§ RoHS Compliant
ï§ Solder Hot Dip Tin (Sn) Terminal Finish
ï§ Cathode Indicated By Polarity Band
Cathode
Anode
ELECTRICAL SYMBOL
Electrical Characteristics
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Condition
BV
Breakdown Voltage
IR=100µA
IR=5µA
IR
Reverse Leakage Current
VR=20V
VR=75V
VF
Forward Voltage
TC1N4448M, TC1N914BM
IF=5mA
TC1N4148M, TC1N4148M
IF=10mA
TC1N4448M, TC1N914BM
IF=100mA
TRR
Reverse Recovery Time
IF=10mA, VR=6V
RL=100ï
IRR=1mA
C
Capacitance
VR=0V, f=1MHZ
Limits
Min
Max
100
75
25
5
0.62
0.72
1.0
1.0
4
4
Unit
Volts
nA
µA
Volts
nS
pF
Number: DB-050
Jan 2010 / F
Page 1
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