TC1N4148M Datasheet, PDF (1/4 Pages) Tak Cheong Electronics (Holdings) Co.,Ltd – 300 mW DO-34 Hermetically Sealed Glass Fast Switching Diodes

®
TAK CHEONG
SEMICONDUCTOR
300 mW DO-34 Hermetically
Sealed Glass Fast Switching
Diodes
AXIAL LEAD
DO34
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
P_D
Power Dissipation
300
mW
TSTG
Storage Temperature Range
-65 to +150
°C
T_J
Operating Junction Temperature
+175
°C
WIV
Working Inverse Voltage
75
V
I_O
Average Rectified Current
150
mA
I_FM
Non-repetitive Peak Forward Current
450
mA
IFSURGE
Peak Forward Surge Current
(Pulse Width = 1.0 µsecond)
2
A
These ratings are limiting values above which the serviceability of the diode may be impaired.
Specification Features:
ƒ Fast Switching Device (T_RR <4.0 nS)
ƒ DO-34 Package (JEDEC DO-204)
ƒ Through-Hole Device Type Mounting
ƒ Hermetically Sealed Glass
ƒ Compression Bonded Construction
ƒ All External Surfaces Are Corrosion Resistant And Lads Are Readily Solderable
ƒ RoHS Compliant
ƒ Solder Hot Dip Tin (Sn) Terminal Finish
ƒ Cathode Indicated By Polarity Band
DEVICE MARKING DIAGRAM
(TC1N4148M)
L
: Logo
DEVICE MARKING DIAGRAM
(TC1N4448M / TC1N914BM)
L
: Logo
Device Code : TC1NxxxxM
Cathode
Anode
ELECTRICAL SYMBOL
Electrical Characteristics
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Condition
B_V
Breakdown Voltage
IR=100µA
I_R=5µA
IR
Reverse Leakage Current
VR=20V
VR=75V
VF
Forward Voltage
TC1N4448M, TC1N914BM
IF=5mA
TC1N4148M, TC1N4148M
IF=10mA
TC1N4448M, TC1N914BM
IF=100mA
TRR
Reverse Recovery Time
IF=10mA, VR=6V
RL=100Ω
IRR=1mA
C
Capacitance
VR=0V, f=1MHZ
Limits
Min
Max
100
75
25
5
0.62 0.72
1.0
1.0
4
4
Unit
Volts
nA
µA
Volts
nS
pF
Number: DB-050
June 2008 / E
Page 1