RB751V-40 Datasheet, PDF (1/4 Pages) Rohm – Schottky barrier diode

TAK CHEONG ^®
SEMICONDUCTOR
200mW SOD-323 SURFACE MOUNT
Very Small Outline Flat Lead Plastic Package
Schottky Barrier Diode
Absolute Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
PD
Power Dissipation
200
mW
TSTG
Storage Temperature Range
-55 to +125
°C
T_J
Operating Junction Temperature
+125
°C
VRRM
Repetitive Peak Reverse Voltage
40
V
VR
Reverse Voltage
30
V
IF
Forward Current
30
mA
I_FSM
Non-Repetitive Peak Forward Current
500
mA
These ratings are limiting values above which the serviceability of the diode may be impaired.
Specification Features:
ƒ Low Forward Voltage Drop
ƒ Flat Lead SOD-323 Small Outline Plastic Package
ƒ Surface Device Type Mounting
ƒ RoHS Compliant
ƒ Green EMC
ƒ Matte Tin(Sn) Lead Finish
ƒ Band Indicates Cathode
Electrical Characteristics
T_A = 25°C unless otherwise noted
Symbol
Parameter
BV
Breakdown Voltage
I_R
Reverse Leakage Current
V_F
Forward Voltage
TCBAT42WS,
DEVICE MARKING CODES:
Device Type
RB751V-40
Device Marking
B5
Test Condition
I_R=10µA
V_R=30V
I_F=1mA
Limits
Min Max
30
0.5
0.37
Unit
Volts
µA
Volts
Nov 2008 Release, Revision C
Page 1