RB551V-30 Datasheet, PDF (1/4 Pages) Rohm – Schottky barrier diode

TAK CHEONG ^®
200mW SOD-323 SURFACE MOUNT
Small Outline Flat Lead Plastic Package
Schottky Barrier Diode
SEMICONDUCTOR
Absolute Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
PD
Power Dissipation
200
mW
T_STG
Storage Temperature Range
-65 to +125
°C
TJ
Operating Junction Temperature
+125
°C
V_RM
Repetitive Peak Reverse Voltage
30
V
V_R
Maximum DC Blocking Voltage
20
V
IF(AV)
Average Forward Rectified Current
500
mA
I_FSM
Peak Forward Surge Current
(8.3mS Single Half-wave)
5
A
These ratings are limiting values above which the serviceability of the diode may be impaired.
Specification Features:
ƒ Low Forward Voltage Drop
ƒ Flat Lead SOD-323 Small Outline Plastic Package
ƒ Surface Device Type Mounting
ƒ RoHS Compliant
ƒ Green EMC
ƒ Matte Tin(Sn) Lead Finish
ƒ Band Indicates Cathode
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
B_V
Breakdown Voltage
IR
Reverse Leakage Current
VF
Forward Voltage
TCBAT42WS,
DEVICE MARKING CODE:
Device Type
RB551V-30
Device Marking
B3
Test Condition
I_R=500µA
VR=20V
I_F=100mA
I_F=500mA
Limits
Min Max
30
100
0.360
0.470
Unit
Volts
µA
Volts
Nov 2008 Release, Revision E
Page 1