MBRF20100CT Datasheet, PDF (1/4 Pages) Motorola, Inc – SWITCHMODE™ Schottky Power Rectifirers

TAK CHEONG ^®
SEMICONDUCTOR
20A SCHOTTKY BARRIER DIODE
Full Pack High Voltage Schottky
Rectifier
Specification Features:
ƒ High Voltage Wide Range Selection, 100V, 150V & 200V
ƒ High Switching Speed Device
ƒ Low Forward Voltage Drop
ƒ Low Power Loss and High Efficiency
ƒ Guard Ring for Over-voltage Protection
ƒ High Surge Capability
ƒ RoHS Compliant
ƒ Matte Tin(Sn) Lead Finish
ƒ Terminal Leads Surface is Corrosion Resistant
and can withstand to 260°C Wave Soldering or
per MIL-STD-750, Method 2026.
1
2
3
TO-220FP
DEVICE MARKING DIAGRAM
L xxyy
Line 2
Line 3
Line 4
L = Tak Cheong Logo
xxyy = Monthly Date Code
Line 2 = MBRF
Line 3 = 20xxxCT
Line 4 = Polarity
POLARITY CONFIGURATION
1. Anode
2. Cathode
3. Anode
MAXIMUM RATINGS (Per Leg, unless otherwise specified )
Symbol
Parameter
MBRF20100CT MBRF20150CT MBRF20200CT
VRRM Maximum Repetitive Reverse Voltage
VRWM Working Peak Reverse Voltage
100
150
200
V_R
Maximum DC Reverse Voltage
Average Rectified Forward Current
IF(AV)
Per Leg
10
Per Package
20
I_FSM
Non-repetitive Peak Forward Surge Current
8.3mS Single Phase @ Rated Load
150
TSTG
Storage Temperature Range
-65 to +150
T_J
Operating Junction Temperature
+150
These ratings are limiting values above which the serviceability of the diode may be impaired.
THERMAL CHARACTERISTICS
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
R_θJC
Maximum Thermal Resistance, Junction-to-Case
2.0
R_θJA
Maximum Thermal Resistance, Junction-to-Ambient (per leg)
60
Units
V
A
A
°C
°C
Units
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (Per Diode )
Symbol
Parameter
Test Condition
(Note 1)
TA = 25°C unless otherwise noted
MBRF20100CT
MBRF20150CT
Min
Max
Min
Max
IR
Reverse Current
VF
Forward Voltage
Note/s:
1. Tested under pulse condition of 300μS.
@ rated VR
I_F = 10A
I_F = 20A
---
200
---
200
0.85
0.92
---
---
0.95
1.00
MBRF20200CT
Min
Max
---
200
1.00
---
1.25
Units
μA
V
Number: DB-151
March 2010, Revision D
Page 1