MBRF10100CT Datasheet, PDF (1/4 Pages) KEC(Korea Electronics) – SCHOTTKY BARRIER TYPE DIODE

TAK CHEONG ^®
SEMICONDUCTOR
10A SCHOTTKY BARRIER DIODE
Full Pack High Voltage Schottky
Rectifier
Specification Features:
ƒ High Voltage Wide Range Selection, 100V, 150V & 200V
ƒ High Switching Speed Device
ƒ Low Forward Voltage Drop
ƒ Low Power Loss and High Efficiency
ƒ Guard Ring for Over-voltage Protection
ƒ High Surge Capability
ƒ RoHS Compliant
ƒ Matte Tin(Sn) Lead Finish
ƒ Terminal Leads Surface is Corrosion Resistant
and can withstand to 260°C Wave Soldering or
per MIL-STD-750, Method 2026.
1
2
3
TO-220FP
DEVICE MARKING DIAGRAM
L xxyy
Line 2
Line 3
Line 4
L = Tak Cheong Logo
xxyy = Monthly Date Code
Line 2 = MBRF
Line 3 = 10xxxCT
Line 4 = Polarity
POLARITY CONFIGURATION
1. Anode
2. Cathode
3. Anode
MAXIMUM RATINGS (Per Leg, unless otherwise specified )
Symbol
Parameter
MBRF10100CT MBRF10150CT MBRF10200CT
VRRM Maximum Repetitive Reverse Voltage
V_RWM Working Peak Reverse Voltage
100
150
200
V_R
Maximum DC Reverse Voltage
Average Rectified Forward Current
I_F(AV)
Per Leg
5
Per Package
10
IFSM
Non-repetitive Peak Forward Surge Current
8.3mS Single Phase @ Rated Load
80
T_STG Storage Temperature Range
TJ
Operating Junction Temperature
These ratings are limiting values above which the serviceability of the diode may be impaired.
-65 to +150
+150
Units
V
A
A
°C
°C
THERMAL CHARACTERISTIC
Symbol
Parameter
Value
Units
R_θJC
Maximum Thermal Resistance, Junction-to-Case
R_θJA
Maximum Thermal Resistance, Junction-to-Ambient (per leg)
1.5
°C/W
62.5
°C/W
ELECTRICAL CHARACTERISTICS (Per Leg)
Symbol
Parameter
Test Condition
(Note 1)
IR
Reverse Current
V_F
Forward Voltage
Note/s:
1. Tested under pulse condition of 300μS.
@ rated VR
IF = 5A
IF = 10A
T_A = 25°C unless otherwise noted
MBRF10100CT
MBRF10150CT
Min
Max
Min
Max
---
100
---
100
0.85
0.92
---
---
0.95
1.00
MBRF10200CT
Min
Max
---
100
1.00
---
1.25
Units
μA
V
Number: DB-150
March 2010, Revision D
Page 1