MBR20100CT Datasheet, PDF (1/4 Pages) Vishay Siliconix – Dual High-Voltage Schottky Rectifiers

TAK CHEONG ^®
SEMICONDUCTOR
20A SCHOTTKY BARRIER DIODE
Dual High Voltage Schottky Rectifier
Specification Features:
ƒ High Voltage Wide Range Selection, 100V, 150V & 200V
ƒ High Switching Speed Device
ƒ Low Forward Voltage Drop
ƒ Low Power Loss and High Efficiency
ƒ Guard Ring for Over-voltage Protection
ƒ High Surge Capability
ƒ RoHS Compliant
ƒ Matte Tin(Sn) Lead Finish
ƒ Terminal Leads Surface is Corrosion Resistant
and can withstand to 260°C Wave Soldering or
per MIL-STD-750, Method 2026.
1
2
3
TO-220AB
DEVICE MARKING DIAGRAM
L xxyy
Line 2
Line 3
Line 4
L = Tak Cheong Logo
xxyy = Monthly Date Code
Line 2 = MBR
Line 3 = 20xxxCT
Line 4 = Polarity
POLARITY CONFIGURATION
MAXIMUM RATINGS (Per Leg, unless otherwise specified )
Symbol
Parameter
MBR20100CT
VRRM Maximum Repetitive Reverse Voltage
VRWM Working Peak Reverse Voltage
100
VR
Maximum DC Reverse Voltage
Average Rectified Forward Current
IF(AV)
Per Leg
Per Package
I_FSM
Non-repetitive Peak Forward Surge Current
8.3mS Single Phase @ Rated Load
TSTG
Storage Temperature Range
TJ
Operating Junction Temperature
These ratings are limiting values above which the serviceability of the diode may be impaired.
1. Anode
2. Cathode
3. Anode
POLARITY CONFIGURATION
MBR20150CT
MBR20200CT
150
200
10
20
150
-65 to +150
+150
THERMAL CHARACTERISTICS
T_A = 25°C unless otherwise noted
Symbol
Parameter
Value
R_θJC
Maximum Thermal Resistance, Junction-to-Case
2.0
R_θJA
Maximum Thermal Resistance, Junction-to-Ambient (per leg)
60
Units
V
A
A
°C
°C
Units
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (Per Diode )
Symbol
Parameter
Test Condition
(Note 1)
IR
V_F
Note/s:
1.
Reverse Current
Forward Voltage
@ rated VR
IF = 10A
IF = 20A
Tested under pulse condition of 300μS.
TA = 25°C unless otherwise noted
MBR20100CT
MBR20150CT
Min
Max
Min
Max
---
200
---
200
0.85
0.92
---
---
0.95
1.00
MBR20200CT
Min
Max
---
200
1.00
---
1.25
Units
μA
V
Number: DB-028
March 2010 Release, Revision F
Page 1