MBR10100CT Datasheet, PDF (1/4 Pages) List of Unclassifed Manufacturers – 10 Amp HT Power Schottky Barrier Rectifier 100 Volts to 200Volts

TAK CHEONG ^®
SEMICONDUCTOR
10A SCHOTTKY BARRIER DIODE
Dual High Voltage Schottky Rectifier
Specification Features:
ƒ High Voltage Wide Range Selection, 100V, 150V & 200V
ƒ High Switching Speed Device
ƒ Low Forward Voltage Drop
ƒ Low Power Loss and High Efficiency
ƒ Guard Ring for Over-voltage Protection
ƒ High Surge Capability
ƒ RoHS Compliant
ƒ Matte Tin(Sn) Lead Finish
ƒ Terminal Leads Surface is Corrosion Resistant
and can withstand to 260°C Wave Soldering or
per MIL-STD-750, Method 2026.
1
2
3
TO-220AB
DEVICE MARKING DIAGRAM
L xxyy
Line 2
Line 3
Line 4
L = Tak Cheong Logo
xxyy = Monthly Date Code
Line 2 = MBR
Line 3 = 10xxxCT
Line 4 = Polarity
POLARITY CONFIGURATION
1. Anode 2. Cathode
3. Anode
MAXIMUM RATINGS (Per Leg, unless otherwise specified )
Symbol
Parameter
MBR10100CT
V_RRM Maximum Repetitive Reverse Voltage
VRWM Working Peak Reverse Voltage
100
VR
Maximum DC Reverse Voltage
Average Rectified Forward Current
I_F(AV)
Per Leg
Per Package
I_FSM
Non-repetitive Peak Forward Surge Current
8.3mS Single Phase @ Rated Load
TSTG Storage Temperature Range
T_J
Operating Junction Temperature
These ratings are limiting values above which the serviceability of the diode may be impaired.
MBR10150CT
150
5
10
80
-65 to +150
+150
MBR10200CT
200
THERMAL CHARACTERISTIC
Symbol
Parameter
Value
RθJC
Maximum Thermal Resistance, Junction-to-Case (per leg)
R_θJA
Maximum Thermal Resistance, Junction-to-Ambient (per leg)
1.5
62.5
Units
V
A
A
°C
°C
Units
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (Per Leg)
Symbol
Parameter
Test Condition
(Note 1)
IR
Reverse Current
VF
Forward Voltage
Note/s:
1. Tested under pulse condition of 300μS.
@ rated VR
I_F = 5A
I_F = 10A
TA = 25°C unless otherwise noted
MBR10100CT
MBR10150CT
Min
Max
Min
Max
---
100
---
100
0.85
0.92
---
---
0.95
1.00
MBR10200CT
Min
Max
---
100
1.00
---
1.25
Units
μA
V
Number: DB-027
March 2010 Release, Revision F
Page 1