LLDB3 Datasheet, PDF (1/3 Pages) Formosa MS – DIAC

SEMICONDUCTOR
LL-34 Hermetically Sealed
Glass BI-directional Trigger Diode
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
Power Dissipation
PD
@ Ta = 50℃
150
mW
ITRM
Repetitive peak on-state current
tp = 20us, F = 120Hz
2
A
Tstg
Storage temperature range
Tj
Operating junction temperature
-40 ~ 125
°C
These ratings are limiting values above which the serviceability of the diode may be impaired.
Specification Features:
 VBO = 32V
 LL-34 (Mini-MELF) Package
 Surface Device Type Mounting
 Hermetically Sealed Glass
 Compression Bonded Construction
 All External Surfaces Are Corrosion Resistant And Terminals Are Readily Solderable
 RoHS Compliant
 Matte Tin (Sn) Terminal Finish
SURFACE MOUNT
LL34
DEVICE MARKING DIAGRAM
Band Color : Green
Electrical Characteristics
Symbol
TA = 25°C unless otherwise noted
Parameter
VBO
[VBO’-VBO]
Breakover Voltage
Breakover Voltage Symmetry
[V]
Dynamic Breakover Voltage
Vo
Output Voltage
IBO
Breakover Current
TR
Rise Time
IB
Leakage Current
IP
Peak Current
Notes:
1. All parameters applicable to both forward and reverse directions.
2. Connected in parallel in the device
Test Condition
C = 22nF (note 2)
C = 22nF (note 2)
VBO and VF at 10mA
See diagram 2
(R = 20Ω)
C = 22nF (note 2)
See diagram 3
VR = 0.5VBO max
See diagram 2
Limits
Min Max
28
36
3
5
5
50
2
10
0.3
Unit
Volts
Volts
Volts
Volts
uA
uS
uA
A
Number: DB-144
Jan.2011 / B
Page 1