|
KELDB3 Datasheet, PDF (1/3 Pages) Tak Cheong Electronics (Holdings) Co.,Ltd – DO-35 Hermetically Sealed Glass BI-directional Trigger Diode | |||
|
SEMICONDUCTOR
DO-35 Hermetically
Sealed Glass BI-directional Trigger Diode
AXIAL LEAD
DO35
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
PD
Power Dissipation
@ Ta = 50â
150
mW
ITRM
Repetitive peak on-state current
tp = 20us, F = 120Hz
2
A
Tstg
Storage temperature range
Tj
Operating junction temperature
-40 ~ 125
°C
These ratings are limiting values above which the serviceability of the diode may be impaired.
Specification Features:
 VBO = 32V
 DO-35 Package (JEDEC)
 Through-Hole Device Type Mounting
 Hermetically Sealed Glass
 Compression Bonded Construction
 All External Surfaces Are Corrosion Resistant And Leads Are Readily Solderable
 RoHS Compliant
 Solder Hot Dip Tin (Sn) Terminal Finish
DEVICE MARKING DIAGRAM
Electrical Characteristics
Symbol
TA = 25°C unless otherwise noted
Parameter
VBO
[VBOâ ]- [VBO]
Breakover Voltage
Breakover Voltage Symmetry
[ÎV]
Dynamic Breakover Voltage
Vo
Output Voltage
IBO
Breakover Current
TR
Rise Time
IB
Leakage Current
IP
Peak Current
Notes:
1. All parameters applicable to both forward and reverse directions.
2. Connected in parallel in the device
Test Condition
C = 22nF (note 2)
C = 22nF (note 2)
VBO and VF at 10mA
See diagram 2
(R = 20Ω)
C = 22nF (note 2)
See diagram 3
VR = 0.5VBO max
See diagram 2
Limits
Min Max
28
36
3
5
5
50
2
10
0.3
Unit
Volts
Volts
Volts
Volts
uA
uS
uA
A
Number: DB-131
November 2008 / A
Page 1
|
▷ |